Auflistung nach Schlagwort "Passivation layer"

Anzeige der Dokumente 1-3 von 3

Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...

Anzeige der Dokumente 1-3 von 3

Durchblättern